Projects2
Our customer, a fabless semiconductor company, was developing a mixed signal Integrated circuit for advanced power management systems. The IC was tooled in a recently introduced, fine line high voltage CMOS process. The wafer foundry supplied only a nominal simulation model for the NPN transistor used in the system voltage reference. The silicon sample reference system could not be trimmed to nominal voltage or temperature coefficient. IC Design was engaged to define the root causes and generate corrective action for the production version of the device.
IC Design worked with the customer’s engineering staff to characterize the silicon and define the root causes. Statistical simulation models(batch and random mis-match) were developed and implemented in the customer’s simulation environment. Design corrective actions were identified and verified in the new simulation environment. After project completion the customer was able to predict the behavior of the reference system and reduce the number of trim bits.
This IC was a “Charge Locked” differential capacitance sensor based on charge redistribution principles.The device was specified to operate over a temperature range of -40c to 150c in an automotive ABS system. Long term stability and drift were of extreme importance. The device also contained poly fuses that could by programmed in the field to calibrate the pressure sensor. IC Design was engaged to consult on design, manufacturability and field reliability. Over a fifteen yield period IC Design Services re-tooled this design in three difference technology nodes and consulted with the customer to maintain multiple manufacturing sources.
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